AONR26309A Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 6.5A 8DFN
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 10V, 32mOhm @ 5.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V, 1100pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 14A (Tc), 5.7A (Ta), 21A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W (Ta), 7W (Tc), 1.5W (Ta), 20.8W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel, Common Drain (Complementary)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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Technische Details AONR26309A Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 6.5A 8DFN, Supplier Device Package: 8-DFN-EP (3x3), Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.2V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 10V, 32mOhm @ 5.7A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V, 1100pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 14A (Tc), 5.7A (Ta), 21A (Tc), Drain to Source Voltage (Vdss): 30V, Power - Max: 1.5W (Ta), 7W (Tc), 1.5W (Ta), 20.8W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Common Drain (Complementary), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).