AONR32314 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 17A/30A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 17A, 10V
Power Dissipation (Max): 4.1W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 15 V
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Technische Details AONR32314 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 17A/30A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 8.7mOhm @ 17A, 10V, Power Dissipation (Max): 4.1W (Ta), 24W (Tc), Vgs(th) (Max) @ Id: 2.25V @ 250µA, Supplier Device Package: 8-DFN (3x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 15 V.
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AONR32314 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; 9.6W; DFN8; 3x3mm Case: DFN8 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 22nC Dimensions: 3x3mm On-state resistance: 8.7mΩ Power dissipation: 9.6W Drain current: 25.5A Gate-source voltage: ±20V Drain-source voltage: 30V |
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