AONR34332C Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 48A/50A 8DFN
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4175 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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Technische Details AONR34332C Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 48A/50A 8DFN, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 4175 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Supplier Device Package: 8-DFN-EP (3.3x3.3), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 6.2W (Ta), 83.3W (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote AONR34332C
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| AONR34332C | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 22W Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 78nC On-state resistance: 1.6mΩ Gate-source voltage: ±12V Power dissipation: 22W Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 400A Case: DFN3.3x3.3 EP Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AONR34332C |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 22W
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 78nC
On-state resistance: 1.6mΩ
Gate-source voltage: ±12V
Power dissipation: 22W
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 400A
Case: DFN3.3x3.3 EP
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 22W
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 78nC
On-state resistance: 1.6mΩ
Gate-source voltage: ±12V
Power dissipation: 22W
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 400A
Case: DFN3.3x3.3 EP
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH