AONR36328 ALPHA & OMEGA SEMICONDUCTOR

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 70A; 9.6W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 9.6W
Case: DFN3x3 EP
Gate-source voltage: ±16V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhancement
Pulsed drain current: 70A
Kind of package: reel; tape
Anzahl je Verpackung: 5000 Stücke
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Technische Details AONR36328 ALPHA & OMEGA SEMICONDUCTOR
Description: N, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V, Power Dissipation (Max): 3.1W (Ta), 24W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V.
Weitere Produktangebote AONR36328
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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AONR36328 | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V |
Produkt ist nicht verfügbar |
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AONR36328 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 70A; 9.6W; DFN3x3 EP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Power dissipation: 9.6W Case: DFN3x3 EP Gate-source voltage: ±16V On-state resistance: 8.4mΩ Mounting: SMD Gate charge: 11nC Kind of channel: enhancement Pulsed drain current: 70A Kind of package: reel; tape |
Produkt ist nicht verfügbar |