AONR62921 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: 100V N CHAN FET SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13.5A, 10V
Power Dissipation (Max): 4.1W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 50 V
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Technische Details AONR62921 Alpha & Omega Semiconductor Inc.
Description: 100V N CHAN FET SMD, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13.5A, 10V, Power Dissipation (Max): 4.1W (Ta), 54W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-DFN-EP (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 50 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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AONR62921 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 31.5A; 21.5W; DFN3.3x3.3 Mounting: SMD Polarisation: unipolar Case: DFN3.3x3.3 Kind of channel: enhancement Type of transistor: N-MOSFET Gate charge: 35nC On-state resistance: 10.2mΩ Gate-source voltage: ±20V Power dissipation: 21.5W Drain current: 31.5A Drain-source voltage: 100V |
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