AONR66924 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 5W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.43 EUR |
| 14+ | 1.52 EUR |
| 25+ | 1.29 EUR |
| 100+ | 1.01 EUR |
| 250+ | 0.88 EUR |
| 500+ | 0.8 EUR |
| 1000+ | 0.73 EUR |
| 2500+ | 0.65 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AONR66924 Alpha & Omega Semiconductor Inc.
Description: N, Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-DFN-EP (3x3), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Power Dissipation (Max): 5W (Ta), 30W (Tc), Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 32A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote AONR66924
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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AONR66924 | Alpha & Omega Semiconductor Inc. |
Description: N Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-DFN-EP (3x3) Vgs(th) (Max) @ Id: 2.6V @ 250µA Power Dissipation (Max): 5W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 32A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AONR66924 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 5W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: N
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 5W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH