
AONS32306 ALPHA & OMEGA SEMICONDUCTOR

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 20W; DFN5x6
Case: DFN5x6
Mounting: SMD
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 36A
On-state resistance: 3.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 20W
Polarisation: unipolar
Gate charge: 63nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2814 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
136+ | 0.53 EUR |
153+ | 0.47 EUR |
176+ | 0.41 EUR |
186+ | 0.38 EUR |
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Technische Details AONS32306 ALPHA & OMEGA SEMICONDUCTOR
Description: N, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V, Power Dissipation (Max): 6.2W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 15 V.
Weitere Produktangebote AONS32306 nach Preis ab 0.38 EUR bis 0.94 EUR
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AONS32306 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 20W; DFN5x6 Case: DFN5x6 Mounting: SMD Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 36A On-state resistance: 3.6mΩ Type of transistor: N-MOSFET Power dissipation: 20W Polarisation: unipolar Gate charge: 63nC Kind of channel: enhancement |
auf Bestellung 2814 Stücke: Lieferzeit 14-21 Tag (e) |
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AONS32306 | Hersteller : Alpha & Omega Semiconductor |
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Produkt ist nicht verfügbar |
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AONS32306 | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 15 V |
Produkt ist nicht verfügbar |