Weitere Produktangebote AONS32314
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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AONS32314 | Alpha & Omega Semiconductor Inc. |
Description: NPackaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 15 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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AONS32314 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 26A; 10W; DFN5x6 Case: DFN5x6 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 22nC On-state resistance: 8.7mΩ Power dissipation: 10W Drain current: 26A Gate-source voltage: ±20V Drain-source voltage: 30V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AONS32314 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 15 V
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AONS32314 |
![]() |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 26A; 10W; DFN5x6
Case: DFN5x6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22nC
On-state resistance: 8.7mΩ
Power dissipation: 10W
Drain current: 26A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 26A; 10W; DFN5x6
Case: DFN5x6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22nC
On-state resistance: 8.7mΩ
Power dissipation: 10W
Drain current: 26A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH


