AONS62614T

Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 39A/100A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 142W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)

Hersteller: Alpha? Semiconductor
N-канальний ПТ, Udss, В = 60, Id = 100 А, Ciss, пФ @ Uds, В = 3660 @ 30, Qg, нКл = 90, Rds = 2,5 мОм, Ugs(th) = 2,2 В, Р, Вт = 142, Тексп, °C = -55...+175, Тип монт. = SMD,... Транзистори Корпус: PowerSMD-8 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke