AONS660A70F ALPHA&OMEGA
Hersteller: ALPHA&OMEGA
700V, A MOS5 TM N-CHANNEL POWER AONS660A70F TAONS660A70F
Anzahl je Verpackung: 2 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 9.79 EUR |
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Technische Details AONS660A70F ALPHA&OMEGA
Description: MOSFET N-CH 700V 1.7A/9.6A 8DFN, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V, Drain to Source Voltage (Vdss): 700 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 8-DFN-EP (5x6), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 4.1W (Ta), 138W (Tc), Rds On (Max) @ Id, Vgs: 660mOhm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), 9.6A (Tc).
Weitere Produktangebote AONS660A70F
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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AONS660A70F | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 700V 1.7A/9.6A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Drain to Source Voltage (Vdss): 700 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-DFN-EP (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 4.1W (Ta), 138W (Tc) Rds On (Max) @ Id, Vgs: 660mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), 9.6A (Tc) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
AONS660A70F | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 700V 1.7A/9.6A 8DFN Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Drain to Source Voltage (Vdss): 700 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-DFN-EP (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 4.1W (Ta), 138W (Tc) Rds On (Max) @ Id, Vgs: 660mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), 9.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| AONS660A70F |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 1.7A/9.6A 8DFN
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-DFN-EP (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4.1W (Ta), 138W (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), 9.6A (Tc)
Description: MOSFET N-CH 700V 1.7A/9.6A 8DFN
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-DFN-EP (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4.1W (Ta), 138W (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), 9.6A (Tc)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AONS660A70F |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 1.7A/9.6A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-DFN-EP (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4.1W (Ta), 138W (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), 9.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 700V 1.7A/9.6A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-DFN-EP (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4.1W (Ta), 138W (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), 9.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH