AONS66817 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: SINGLE
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 113W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Produktrezensionen
Produktbewertung abgeben
Technische Details AONS66817 Alpha & Omega Semiconductor Inc.
Description: SINGLE, Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Supplier Device Package: 8-DFN (5x6), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Power Dissipation (Max): 6.2W (Ta), 113W (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSMD, Flat Leads, Packaging: Tape & Reel (TR), Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Part Status: Active.
Weitere Produktangebote AONS66817
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| AONS66817 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 210A; 45W; DFN5x6 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Gate charge: 38nC On-state resistance: 4.1mΩ Gate-source voltage: ±20V Power dissipation: 45W Drain-source voltage: 80V Drain current: 120A Pulsed drain current: 210A Polarisation: unipolar Case: DFN5x6 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AONS66817 |
![]() |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 210A; 45W; DFN5x6
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 38nC
On-state resistance: 4.1mΩ
Gate-source voltage: ±20V
Power dissipation: 45W
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 210A
Polarisation: unipolar
Case: DFN5x6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 210A; 45W; DFN5x6
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 38nC
On-state resistance: 4.1mΩ
Gate-source voltage: ±20V
Power dissipation: 45W
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 210A
Polarisation: unipolar
Case: DFN5x6
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
