AONS66909 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 7.3W (Ta), 208W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details AONS66909 Alpha & Omega Semiconductor Inc.
Description: N, Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Part Status: Active, Supplier Device Package: 8-DFN (5x6), Vgs(th) (Max) @ Id: 3.7V @ 250µA, Power Dissipation (Max): 7.3W (Ta), 208W (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 160A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote AONS66909
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| AONS66909 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 160A; Idm: 340A Type of transistor: N-MOSFET Technology: AlphaSGT™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 160A Pulsed drain current: 340A Power dissipation: 83W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 52nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| AONS66909 | Alpha & Omega Semiconductor |
100V N-Channel AlphaSGT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AONS66909 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 160A; Idm: 340A
Type of transistor: N-MOSFET
Technology: AlphaSGT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Pulsed drain current: 340A
Power dissipation: 83W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 160A; Idm: 340A
Type of transistor: N-MOSFET
Technology: AlphaSGT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Pulsed drain current: 340A
Power dissipation: 83W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AONS66909 |
|
Hersteller: Alpha & Omega Semiconductor
100V N-Channel AlphaSGT
100V N-Channel AlphaSGT
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH