AONS66919 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.36 EUR |
| 10+ | 2.78 EUR |
| 25+ | 2.37 EUR |
| 100+ | 1.9 EUR |
| 250+ | 1.68 EUR |
| 500+ | 1.55 EUR |
| 1000+ | 1.43 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AONS66919 Alpha & Omega Semiconductor Inc.
Description: N, Supplier Device Package: 8-DFN (5x6), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Power Dissipation (Max): 6.2W (Ta), 113W (Tc), Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 85A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote AONS66919
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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AONS66919 | Alpha & Omega Semiconductor Inc. |
Description: N Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 2.6V @ 250µA Power Dissipation (Max): 6.2W (Ta), 113W (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Flat Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AONS66919 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 113W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: N
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 113W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH