AONS66920 Alpha & Omega Semiconductor Inc.

Description: MOSFET N-CH 100V 17.5A/48A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 56.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3000+ | 0.79 EUR |
6000+ | 0.74 EUR |
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Technische Details AONS66920 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 17.5A/48A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 48A (Tc), Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V, Power Dissipation (Max): 5W (Ta), 56.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V.
Weitere Produktangebote AONS66920 nach Preis ab 0.91 EUR bis 2.89 EUR
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AONS66920 | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 56.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V |
auf Bestellung 52044 Stücke: Lieferzeit 10-14 Tag (e) |
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AONS66920 | Hersteller : Alpha & Omega Semiconductor |
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auf Bestellung 20063 Stücke: Lieferzeit 14-21 Tag (e) |
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AONS66920 | Hersteller : Alpha & Omega Semiconductor |
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AONS66920 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 48A; Idm: 125A Type of transistor: N-MOSFET Technology: AlphaSGT™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 48A Pulsed drain current: 125A Power dissipation: 22.5W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 8.2mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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AONS66920 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 48A; Idm: 125A Type of transistor: N-MOSFET Technology: AlphaSGT™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 48A Pulsed drain current: 125A Power dissipation: 22.5W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 8.2mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |