AONS66966 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 31.3A/100A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 215W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 31.3A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
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Technische Details AONS66966 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 31.3A/100A 8DFN, Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: 8-DFN (5x6), Vgs(th) (Max) @ Id: 3.6V @ 250µA, Power Dissipation (Max): 6.2W (Ta), 215W (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 31.3A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote AONS66966 nach Preis ab 2.73 EUR bis 7.79 EUR
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AONS66966 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 31.3A/100A 8DFN Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 3.6V @ 250µA Power Dissipation (Max): 6.2W (Ta), 215W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 31.3A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Flat Leads Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V |
auf Bestellung 5117 Stücke: Lieferzeit 10-14 Tag (e) |
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| AONS66966 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 31.3A/100A 8DFN
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 215W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 31.3A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Description: MOSFET N-CH 100V 31.3A/100A 8DFN
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 215W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 31.3A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
auf Bestellung 5117 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.79 EUR |
| 10+ | 5.12 EUR |
| 100+ | 3.59 EUR |
| 500+ | 2.94 EUR |
| 1000+ | 2.73 EUR |