AONV110A60 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-DFN (8x8)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 357W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tube
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Technische Details AONV110A60 Alpha & Omega Semiconductor Inc.
Description: N, Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 4-DFN (8x8), Vgs(th) (Max) @ Id: 3.6V @ 250µA, Power Dissipation (Max): 8.3W (Ta), 357W (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 19A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 35A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-PowerTSFN, Packaging: Tube.
Weitere Produktangebote AONV110A60
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| AONV110A60 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 35A; Idm: 140A; 357W; DFN8x8 Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 72nC On-state resistance: 0.11Ω Drain current: 35A Gate-source voltage: ±20V Power dissipation: 357W Pulsed drain current: 140A Drain-source voltage: 600V Kind of package: reel; tape Case: DFN8x8 Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AONV110A60 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; Idm: 140A; 357W; DFN8x8
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 72nC
On-state resistance: 0.11Ω
Drain current: 35A
Gate-source voltage: ±20V
Power dissipation: 357W
Pulsed drain current: 140A
Drain-source voltage: 600V
Kind of package: reel; tape
Case: DFN8x8
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; Idm: 140A; 357W; DFN8x8
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 72nC
On-state resistance: 0.11Ω
Drain current: 35A
Gate-source voltage: ±20V
Power dissipation: 357W
Pulsed drain current: 140A
Drain-source voltage: 600V
Kind of package: reel; tape
Case: DFN8x8
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH