AONX38168 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 25V 25A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 12.5V, 4520pF @ 12.5V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 85nC @ 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.43 EUR |
| 10+ | 3.52 EUR |
| 100+ | 2.43 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
4 Stücke
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Technische Details AONX38168 Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 25V 25A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc), Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 12.5V, 4520pF @ 12.5V, Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 85nC @ 10V, Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.8V @ 250µA, Supplier Device Package: 8-DFN (5x6).
Weitere Produktangebote AONX38168
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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AONX38168 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 25V 25A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 12.5V, 4520pF @ 12.5V Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 85nC @ 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.8V @ 250µA Supplier Device Package: 8-DFN (5x6) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AONX38168 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 25V; 38/85A; 8/27W; DFN5x6E Mounting: SMD Power dissipation: 8/27W Polarisation: unipolar Drain current: 38/85A Kind of channel: enhancement Drain-source voltage: 25V Type of transistor: N-MOSFET x2 Gate-source voltage: ±12V Semiconductor structure: asymmetric Case: DFN5x6E On-state resistance: 5/1.15mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| AONX38168 | Alpha & Omega Semiconductor |
 25V Dual Asymmetric N-Channel MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AONX38168 |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 25V 25A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 12.5V, 4520pF @ 12.5V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 85nC @ 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET 2N-CH 25V 25A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 12.5V, 4520pF @ 12.5V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 85nC @ 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AONX38168 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 38/85A; 8/27W; DFN5x6E
Mounting: SMD
Power dissipation: 8/27W
Polarisation: unipolar
Drain current: 38/85A
Kind of channel: enhancement
Drain-source voltage: 25V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V
Semiconductor structure: asymmetric
Case: DFN5x6E
On-state resistance: 5/1.15mΩ
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 38/85A; 8/27W; DFN5x6E
Mounting: SMD
Power dissipation: 8/27W
Polarisation: unipolar
Drain current: 38/85A
Kind of channel: enhancement
Drain-source voltage: 25V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V
Semiconductor structure: asymmetric
Case: DFN5x6E
On-state resistance: 5/1.15mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AONX38168 |
|
Hersteller: Alpha & Omega Semiconductor
25V Dual Asymmetric N-Channel MOSFET
25V Dual Asymmetric N-Channel MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH