Weitere Produktangebote AONY36354 nach Preis ab 0.81 EUR bis 2.43 EUR
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AONY36354 | Hersteller : Alpha & Omega Semiconductor Inc. |
 Description: MOSFET 2N-CH 30V 18.5A 8DFNOperating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Flat Leads Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2.6mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 1890pF @ 15V Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 27A (Ta), 85A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc) Technology: MOSFET (Metal Oxide) |
auf Bestellung 853 Stücke: Lieferzeit 10-14 Tag (e) |
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AONY36354 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 49A/85A 8-Pin DFN-D EP T/R |
Produkt ist nicht verfügbar |
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AONY36354 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 18.5A 8DFN Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2.6mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 1890pF @ 15V Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 27A (Ta), 85A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Flat Leads |
Produkt ist nicht verfügbar |
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AONY36354 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/54.5A; 8.5/12.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 31/54.5A Power dissipation: 8.5/12.5W Case: DFN5x6 Gate-source voltage: ±12V; ±20V On-state resistance: 5.3/2.6mΩ Mounting: SMD Gate charge: 11nC Kind of channel: enhancement Semiconductor structure: asymmetric |
Produkt ist nicht verfügbar |