AONY36354 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 18.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 27A (Ta), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 1890pF @ 15V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2.6mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
auf Bestellung 3919 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.6 EUR |
| 11+ | 1.64 EUR |
| 100+ | 1.1 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.79 EUR |
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Technische Details AONY36354 Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 18.5A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 27A (Ta), 85A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 1890pF @ 15V, Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2.6mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Active.
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AONY36354 Produktcode: 187074
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AONY36354 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 18.5A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 27A (Ta), 85A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 1890pF @ 15V Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2.6mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active |
Produkt ist nicht verfügbar |