AONY36356 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 17.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
auf Bestellung 2786 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.8 EUR |
| 10+ | 1.78 EUR |
| 25+ | 1.51 EUR |
| 100+ | 1.2 EUR |
| 250+ | 1.05 EUR |
| 500+ | 0.96 EUR |
| 1000+ | 0.88 EUR |
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Technische Details AONY36356 Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 17.5A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V, Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-DFN (5x6).
Weitere Produktangebote AONY36356
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AONY36356 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 17.5A/24A 8-Pin DFN-B EP T/R |
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AONY36356 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 17.5A/24A 8-Pin DFN-B EP T/R |
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AONY36356 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 17.5A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-DFN (5x6) |
Produkt ist nicht verfügbar |