AOSP21307

AOSP21307 ALPHA & OMEGA SEMICONDUCTOR


pVersion=0046&contRep=ZT&docId=005056AB82531ED9A6B1C114FD5B5820&compId=AOSP21307.pdf?ci_sign=7601c2aedb26d1b763dd3252b6312a840adbdda1 Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2W; SO8
Case: SO8
Drain-source voltage: -30V
Drain current: -11A
On-state resistance: 11.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1070 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
90+0.80 EUR
198+0.36 EUR
224+0.32 EUR
248+0.29 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details AOSP21307 ALPHA & OMEGA SEMICONDUCTOR

Description: MOSFET P-CH 30V 14A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1995 pF @ 15 V.

Weitere Produktangebote AOSP21307 nach Preis ab 0.29 EUR bis 0.80 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AOSP21307 AOSP21307 Hersteller : ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB82531ED9A6B1C114FD5B5820&compId=AOSP21307.pdf?ci_sign=7601c2aedb26d1b763dd3252b6312a840adbdda1 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2W; SO8
Case: SO8
Drain-source voltage: -30V
Drain current: -11A
On-state resistance: 11.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Mounting: SMD
auf Bestellung 1070 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.80 EUR
198+0.36 EUR
224+0.32 EUR
248+0.29 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
AOSP21307 AOSP21307 Hersteller : Alpha & Omega Semiconductor 5698641265880961aosp21307.pdf P-Channel MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOSP21307 AOSP21307 Hersteller : Alpha & Omega Semiconductor 5698641265880961aosp21307.pdf P-Channel MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOSP21307 AOSP21307 Hersteller : Alpha & Omega Semiconductor Inc. AOSP21307.pdf Description: MOSFET P-CH 30V 14A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1995 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH