Technische Details AOSS21311C Alpha & Omega Semiconductor
Description: MOSFET P-CH 30V 4.3A SOT23-3, Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 1.3W (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 4.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-SMD, SOT-23-3 Variant, Packaging: Tape & Reel (TR).
Weitere Produktangebote AOSS21311C nach Preis ab 0.24 EUR bis 0.82 EUR
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AOSS21311C | Alpha & Omega Semiconductor |
 Trans MOSFET P-CH 30V 4.3A 3-Pin SOT-23 T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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AOSS21311C | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 4.3A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.3A, 10V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, SOT-23-3 Variant Packaging: Cut Tape (CT) |
auf Bestellung 885 Stücke: Lieferzeit 10-14 Tag (e) |
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| AOSS21311C |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 4.3A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 30V 4.3A 3-Pin SOT-23 T/R
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.64 EUR |
| 6000+ | 0.52 EUR |
| AOSS21311C |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 4.3A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, SOT-23-3 Variant
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 4.3A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, SOT-23-3 Variant
Packaging: Cut Tape (CT)
auf Bestellung 885 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 0.82 EUR |
| 42+ | 0.5 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.24 EUR |