AOT10B65M1 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 10A TO220
Td (on/off) @ 25°C: 12ns/91ns
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Reverse Recovery Time (trr): 262 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 150 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 20 A
Part Status: Active
Gate Charge: 24 nC
Test Condition: 400V, 10A, 30Ohm, 15V
Switching Energy: 180µJ (on), 130µJ (off)
Produktrezensionen
Produktbewertung abgeben
Technische Details AOT10B65M1 Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 10A TO220, Td (on/off) @ 25°C: 12ns/91ns, Supplier Device Package: TO-220, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A, Reverse Recovery Time (trr): 262 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Power - Max: 150 W, Current - Collector Pulsed (Icm): 30 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 20 A, Part Status: Active, Gate Charge: 24 nC, Test Condition: 400V, 10A, 30Ohm, 15V, Switching Energy: 180µJ (on), 130µJ (off).
Weitere Produktangebote AOT10B65M1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
AOT10B65M1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 10A; 75W; TO220; Eoff: 0.13mJ; Eon: 0.18mJ Mounting: THT Type of transistor: IGBT Case: TO220 Kind of package: tube Gate charge: 24nC Turn-on time: 27ns Turn-off time: 137ns Turn-off switching energy: 0.13mJ Turn-on switching energy: 0.18mJ Collector-emitter saturation voltage: 1.6V Collector current: 10A Power dissipation: 75W Pulsed collector current: 30A Gate-emitter voltage: ±30V Collector-emitter voltage: 650V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AOT10B65M1 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 75W; TO220; Eoff: 0.13mJ; Eon: 0.18mJ
Mounting: THT
Type of transistor: IGBT
Case: TO220
Kind of package: tube
Gate charge: 24nC
Turn-on time: 27ns
Turn-off time: 137ns
Turn-off switching energy: 0.13mJ
Turn-on switching energy: 0.18mJ
Collector-emitter saturation voltage: 1.6V
Collector current: 10A
Power dissipation: 75W
Pulsed collector current: 30A
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 75W; TO220; Eoff: 0.13mJ; Eon: 0.18mJ
Mounting: THT
Type of transistor: IGBT
Case: TO220
Kind of package: tube
Gate charge: 24nC
Turn-on time: 27ns
Turn-off time: 137ns
Turn-off switching energy: 0.13mJ
Turn-on switching energy: 0.18mJ
Collector-emitter saturation voltage: 1.6V
Collector current: 10A
Power dissipation: 75W
Pulsed collector current: 30A
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH