AOT11S65L Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 11A TO220
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 198W (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
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Technische Details AOT11S65L Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 11A TO220, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Last Time Buy, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 198W (Tc), Rds On (Max) @ Id, Vgs: 399mOhm @ 5.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V.