AOT1404L ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 157A; 208W; TO220
Case: TO220
Drain-source voltage: 40V
Drain current: 157A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 208W
Polarisation: unipolar
Gate charge: 71nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 712 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 32+ | 2.30 EUR |
| 35+ | 2.07 EUR |
| 38+ | 1.90 EUR |
| 40+ | 1.80 EUR |
| 100+ | 1.79 EUR |
| 500+ | 1.73 EUR |
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Technische Details AOT1404L ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 40V 15A/220A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 220A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 417W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V.
Weitere Produktangebote AOT1404L nach Preis ab 1.73 EUR bis 2.30 EUR
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AOT1404L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 157A; 208W; TO220 Case: TO220 Drain-source voltage: 40V Drain current: 157A On-state resistance: 4.2mΩ Type of transistor: N-MOSFET Power dissipation: 208W Polarisation: unipolar Gate charge: 71nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT |
auf Bestellung 712 Stücke: Lieferzeit 14-21 Tag (e) |
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AOT1404L Produktcode: 177805
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AOT1404L | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 40V 15A/220A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 220A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 417W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V |
Produkt ist nicht verfügbar |