AOT2618L Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 7A/23A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 41.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.06 EUR |
| 50+ | 1.45 EUR |
| 100+ | 1.3 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.93 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
7 Stücke
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Technische Details AOT2618L Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 7A/23A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 23A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 41.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V.
Weitere Produktangebote AOT2618L
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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AOT2618L | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 18A; 20.5W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 18A Case: TO220 Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: THT Kind of channel: enhancement Gate charge: 6nC Power dissipation: 20.5W |
auf Bestellung 206 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| AOT2618L |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; 20.5W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 18A
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 6nC
Power dissipation: 20.5W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; 20.5W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 18A
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 6nC
Power dissipation: 20.5W
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)