AOT27S60L Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 27A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 13.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 100 V
auf Bestellung 3155 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.3 EUR |
| 50+ | 3.27 EUR |
| 100+ | 2.97 EUR |
| 500+ | 2.7 EUR |
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Technische Details AOT27S60L Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 27A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 13.5A, 10V, Power Dissipation (Max): 357W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 100 V.
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AOT27S60L Produktcode: 122782
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AOT27S60L | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 27A 3-Pin(3+Tab) TO-220 T/R |
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AOT27S60L | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 27A 3-Pin(3+Tab) TO-220 T/R |
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AOT27S60L | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 27A 3-Pin(3+Tab) TO-220 T/R |
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| AOT27S60L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 27A; Idm: 110A; 357W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 27A Pulsed drain current: 110A Power dissipation: 357W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 26nC Kind of channel: enhancement |
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