AOT296L Alpha & Omega Semiconductor
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Technische Details AOT296L Alpha & Omega Semiconductor
Description: MOSFET N-CH 100V 9.5A/70A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 70A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 107W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V.
Weitere Produktangebote AOT296L
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AOT296L | Hersteller : Alpha & Omega Semiconductor |
 Trans MOSFET N-CH 100V 70A 3-Pin(3+Tab) TO-220 |
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AOT296L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 54W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Case: TO220 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: THT Kind of channel: enhancement Power dissipation: 54W Gate charge: 16.5nC Anzahl je Verpackung: 1 Stücke |
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AOT296L | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 9.5A/70A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V |
Produkt ist nicht verfügbar |
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AOT296L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 54W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Case: TO220 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: THT Kind of channel: enhancement Power dissipation: 54W Gate charge: 16.5nC |
Produkt ist nicht verfügbar |