AOT42S60L ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 417W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 417W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Gate charge: 40nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 417W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 417W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Gate charge: 40nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 160 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
10+ | 7.54 EUR |
14+ | 5.22 EUR |
15+ | 4.93 EUR |
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Produktbewertung abgeben
Technische Details AOT42S60L ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 600V 37A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 21A, 10V, Power Dissipation (Max): 417W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: TO-220, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2154 pF @ 100 V.
Weitere Produktangebote AOT42S60L nach Preis ab 4.7 EUR bis 9.66 EUR
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AOT42S60L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 417W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Power dissipation: 417W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.31Ω Mounting: THT Gate charge: 40nC Kind of channel: enhanced |
auf Bestellung 160 Stücke: Lieferzeit 14-21 Tag (e) |
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AOT42S60L | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 37A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 21A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2154 pF @ 100 V |
auf Bestellung 16990 Stücke: Lieferzeit 10-14 Tag (e) |
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AOT42S60L | Hersteller : Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 37A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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AOT42S60L | Hersteller : Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 37A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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AOT42S60L | Hersteller : Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 37A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |