AOT470 ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 78A; 134W; TO220
Mounting: THT
Power dissipation: 134W
Polarisation: unipolar
Gate charge: 114nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO220
Drain-source voltage: 75V
Drain current: 78A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 937 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 45+ | 1.60 EUR |
| 50+ | 1.44 EUR |
| 65+ | 1.10 EUR |
| 69+ | 1.04 EUR |
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Technische Details AOT470 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 75V 10A/100A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V, Power Dissipation (Max): 2.1W (Ta), 268W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 30 V.
Weitere Produktangebote AOT470 nach Preis ab 1.04 EUR bis 1.60 EUR
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AOT470 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 78A; 134W; TO220 Mounting: THT Power dissipation: 134W Polarisation: unipolar Gate charge: 114nC Kind of channel: enhancement Gate-source voltage: ±25V Case: TO220 Drain-source voltage: 75V Drain current: 78A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET |
auf Bestellung 937 Stücke: Lieferzeit 14-21 Tag (e) |
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AOT470 Produktcode: 144006
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AOT470 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 75V 10A/100A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V Power Dissipation (Max): 2.1W (Ta), 268W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 30 V |
Produkt ist nicht verfügbar |