Weitere Produktangebote AOT480L
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
AOT480L | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 80V 180A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
AOT480L | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 80V 15A/180A TO220Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Part Status: Not For New Designs Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.9W (Ta), 333W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 180A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
AOT480L | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 134A; 167W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 134A Power dissipation: 167W Case: TO220 Gate-source voltage: ±25V On-state resistance: 4.5mΩ Mounting: THT Gate charge: 116nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| AOT480L |
![]() |
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 80V 180A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 80V 180A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AOT480L |
![]() |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 80V 15A/180A TO220
Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 333W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 80V 15A/180A TO220
Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 333W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AOT480L |
![]() |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 134A; 167W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 134A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±25V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 116nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 134A; 167W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 134A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±25V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 116nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH




