AOT482L Alpha & Omega Semiconductor
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Technische Details AOT482L Alpha & Omega Semiconductor
Description: MOSFET N-CH 80V 11A/105A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 105A (Tc), Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 333W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 250µA, Supplier Device Package: TO-220, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 40 V.
Weitere Produktangebote AOT482L
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AOT482L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 82A; 167W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 82A Case: TO220 Gate-source voltage: ±25V On-state resistance: 7.2mΩ Mounting: THT Kind of channel: enhancement Power dissipation: 167W Gate charge: 66.8nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AOT482L | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 80V 11A/105A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 105A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 40 V |
Produkt ist nicht verfügbar |
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AOT482L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 82A; 167W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 82A Case: TO220 Gate-source voltage: ±25V On-state resistance: 7.2mΩ Mounting: THT Kind of channel: enhancement Power dissipation: 167W Gate charge: 66.8nC |
Produkt ist nicht verfügbar |

