AOT482L ALPHA & OMEGA SEMICONDUCTOR

Description: MOSFET N-CH 80V 11A/105A TO220, Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Part Status: Not For New Designs, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 3.7V @ 250µA, Power Dissipation (Max): 2.1W (Ta), 333W (Tc), Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 105A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.