AOT66616L ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 95A; 50W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 95A
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 42.5nC
Power dissipation: 50W
| Anzahl | Privatkunde |
|---|---|
| 40+ | 2.17 EUR |
| 45+ | 1.9 EUR |
| 50+ | 1.7 EUR |
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Technische Details AOT66616L ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 60V 38.5A/140A TO220, Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 3.4V @ 250µA, Power Dissipation (Max): 8.3W (Ta), 125W (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 38.5A (Ta), 140A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote AOT66616L
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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AOT66616L | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 38.5A/140A TO220 Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 3.4V @ 250µA Power Dissipation (Max): 8.3W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 38.5A (Ta), 140A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AOT66616L |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 38.5A/140A TO220
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 38.5A (Ta), 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 60V 38.5A/140A TO220
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 38.5A (Ta), 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH