AOT7N65 ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.5A; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.5A
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.56Ω
Mounting: THT
Gate charge: 19nC
Kind of channel: enhancement
| Anzahl | Preis |
|---|---|
| 66+ | 1.09 EUR |
| 74+ | 0.97 EUR |
| 84+ | 0.86 EUR |
| 100+ | 0.78 EUR |
| 250+ | 0.73 EUR |
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Technische Details AOT7N65 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 650V 7A TO220, Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 192W (Tc), Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote AOT7N65 nach Preis ab 2.13 EUR bis 2.13 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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AOT7N65 | Hersteller : ALPHA&OMEGA |
Transistor N-Channel MOSFET; 650V; 30V; 1,56Ohm; 7A; 192W; -55°C ~ 150°C; AOT7N65 TAOT7n65 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 12 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOT7N65 | Hersteller : AOS |
N-MOSFET 650V 7A TO-220-3 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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AOT7N65 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 650V 7A TO220 Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar |