AOTF10N65 ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.2A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.2A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 27.7nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 622 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 48+ | 1.52 EUR |
| 53+ | 1.36 EUR |
| 63+ | 1.14 EUR |
| 66+ | 1.09 EUR |
| 500+ | 1.04 EUR |
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Technische Details AOTF10N65 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 650V 10A TO220-3F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220F, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 25 V.
Weitere Produktangebote AOTF10N65 nach Preis ab 1.04 EUR bis 1.52 EUR
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AOTF10N65 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6.2A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.2A Case: TO220F Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 27.7nC Kind of channel: enhanced |
auf Bestellung 622 Stücke: Lieferzeit 14-21 Tag (e) |
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AOTF10N65 Produktcode: 165192 |
Transistoren > MOSFET N-CH |
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AOTF10N65 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 650V 10A 3-Pin(3+Tab) TO-220F |
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AOTF10N65 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 650V 10A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 25 V |
Produkt ist nicht verfügbar |