Technische Details AOTF11N60L Alpha & Omega Semiconductor Inc.
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 37.9W; TO220F, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 8A, Power dissipation: 37.9W, Case: TO220F, Gate-source voltage: ±30V, On-state resistance: 0.65Ω, Mounting: THT, Gate charge: 37nC, Kind of channel: enhancement.
Weitere Produktangebote AOTF11N60L
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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AOTF11N60L | ALPHA & OMEGA SEMICONDUCTOR |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 8A; 37.9W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 37.9W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.65Ω Mounting: THT Gate charge: 37nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AOTF11N60L |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 37.9W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 37.9W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Gate charge: 37nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 37.9W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 37.9W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Gate charge: 37nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH