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AOTF15B60D2 AOS

AOTF15B60D2.pdf
Hersteller: AOS
IGBT 600 V 23 A 42 W Through Hole TO-220F Транзистори
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Technische Details AOTF15B60D2 AOS

Description: IGBT 600V 23A TO-220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 105 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A, Supplier Device Package: TO-220F, Td (on/off) @ 25°C: 10ns/72ns, Switching Energy: 260µJ (on), 70µJ (off), Test Condition: 400V, 10A, 30Ohm, 15V, Gate Charge: 17.4 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 23 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 42 W.

Weitere Produktangebote AOTF15B60D2

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
AOTF15B60D2 AOTF15B60D2 Alpha & Omega Semiconductor Inc. AOTF15B60D2.pdf Description: IGBT 600V 23A TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A
Supplier Device Package: TO-220F
Td (on/off) @ 25°C: 10ns/72ns
Switching Energy: 260µJ (on), 70µJ (off)
Test Condition: 400V, 10A, 30Ohm, 15V
Gate Charge: 17.4 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 42 W
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AOTF15B60D2 AOTF15B60D2 ALPHA & OMEGA SEMICONDUCTOR AOTF15B60D2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 16.7W; TO220F; Eoff: 0.07mJ; Eon: 0.26mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 16.7W
Case: TO220F
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 17.4nC
Kind of package: tube
Turn-on time: 25ns
Turn-off time: 80.8ns
Collector-emitter saturation voltage: 1.53V
Turn-off switching energy: 0.07mJ
Turn-on switching energy: 0.26mJ
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF15B60D2 AOTF15B60D2.pdf
AOTF15B60D2
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 600V 23A TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A
Supplier Device Package: TO-220F
Td (on/off) @ 25°C: 10ns/72ns
Switching Energy: 260µJ (on), 70µJ (off)
Test Condition: 400V, 10A, 30Ohm, 15V
Gate Charge: 17.4 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 42 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF15B60D2 AOTF15B60D2.pdf
AOTF15B60D2
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 16.7W; TO220F; Eoff: 0.07mJ; Eon: 0.26mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 16.7W
Case: TO220F
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 17.4nC
Kind of package: tube
Turn-on time: 25ns
Turn-off time: 80.8ns
Collector-emitter saturation voltage: 1.53V
Turn-off switching energy: 0.07mJ
Turn-on switching energy: 0.26mJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH