AOTF20B65M2 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 40A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 292 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 26ns/123ns
Switching Energy: 580µJ (on), 280µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 45 W
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.39 EUR |
| 10+ | 4.86 EUR |
| 100+ | 3.4 EUR |
| 500+ | 2.78 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AOTF20B65M2 Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 40A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 292 ns, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A, Supplier Device Package: TO-220, Td (on/off) @ 25°C: 26ns/123ns, Switching Energy: 580µJ (on), 280µJ (off), Test Condition: 400V, 20A, 15Ohm, 15V, Gate Charge: 46 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 45 W.
Weitere Produktangebote AOTF20B65M2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
AOTF20B65M2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 18W; TO220F; Eoff: 0.28mJ; Eon: 0.58mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 18W Case: TO220F Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 46nC Kind of package: tube Turn-on time: 59ns Turn-off time: 168ns Collector-emitter saturation voltage: 1.7V Turn-off switching energy: 0.28mJ Turn-on switching energy: 0.58mJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AOTF20B65M2 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 18W; TO220F; Eoff: 0.28mJ; Eon: 0.58mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 18W
Case: TO220F
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 168ns
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.28mJ
Turn-on switching energy: 0.58mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 18W; TO220F; Eoff: 0.28mJ; Eon: 0.58mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 18W
Case: TO220F
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 168ns
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.28mJ
Turn-on switching energy: 0.58mJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH