AOTF25S65 ALPHA & OMEGA SEMICONDUCTOR
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 17+ | 4.38 EUR |
| 19+ | 3.76 EUR |
| 500+ | 3.02 EUR |
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Technische Details AOTF25S65 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 650V 25A TO220-3F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 12.5A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220F, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 26.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1278 pF @ 100 V.
Weitere Produktangebote AOTF25S65
| Foto | Bezeichnung | Hersteller | Beschreibung |
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AOTF25S65 | Hersteller : Alpha & Omega Semiconductor |
 Trans MOSFET N-CH 650V 25A 3-Pin(3+Tab) TO-220F T/R |
Produkt ist nicht verfügbar |
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AOTF25S65 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 650V 25A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 12.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 26.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1278 pF @ 100 V |
Produkt ist nicht verfügbar |