
AOTF288L ALPHA & OMEGA SEMICONDUCTOR

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; 17.5W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 30A
Power dissipation: 17.5W
Case: TO220F
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 26.5nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 233 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
37+ | 1.94 EUR |
41+ | 1.76 EUR |
54+ | 1.34 EUR |
57+ | 1.27 EUR |
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Technische Details AOTF288L ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 80V 10.5A/43A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 43A (Tc), Rds On (Max) @ Id, Vgs: 9.2mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 35.5W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: TO-220F, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 40 V.
Weitere Produktangebote AOTF288L nach Preis ab 1.27 EUR bis 1.94 EUR
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AOTF288L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 30A; 17.5W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 30A Power dissipation: 17.5W Case: TO220F Gate-source voltage: ±20V On-state resistance: 9.2mΩ Mounting: THT Kind of channel: enhancement Gate charge: 26.5nC |
auf Bestellung 233 Stücke: Lieferzeit 14-21 Tag (e) |
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AOTF288L | Hersteller : Alpha & Omega Semiconductor |
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Produkt ist nicht verfügbar |
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AOTF288L | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 43A (Tc) Rds On (Max) @ Id, Vgs: 9.2mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 35.5W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 40 V |
Produkt ist nicht verfügbar |