AOTF292L ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 23W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Power dissipation: 23W
Case: TO220F
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 90nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 896 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 3.6 EUR |
| 23+ | 3.23 EUR |
| 100+ | 2.86 EUR |
| 250+ | 2.57 EUR |
| 500+ | 2.43 EUR |
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Technische Details AOTF292L ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 100V 70A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V, Power Dissipation (Max): 47W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: TO-220F, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 50 V.
Weitere Produktangebote AOTF292L nach Preis ab 2.43 EUR bis 3.6 EUR
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AOTF292L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 23W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Power dissipation: 23W Case: TO220F Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Gate charge: 90nC Kind of channel: enhancement |
auf Bestellung 896 Stücke: Lieferzeit 14-21 Tag (e) |
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AOTF292L | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 70A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 50 V |
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