
AOTF4126 ALPHA & OMEGA SEMICONDUCTOR

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 19A; 21W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 19A
Power dissipation: 21W
Case: TO220F
Gate-source voltage: ±25V
On-state resistance: 24mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 9nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 986 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
54+ | 1.33 EUR |
61+ | 1.19 EUR |
70+ | 1.03 EUR |
74+ | 0.97 EUR |
500+ | 0.93 EUR |
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Technische Details AOTF4126 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 100V 6A/27A TO220-3F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220F, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V.
Weitere Produktangebote AOTF4126 nach Preis ab 0.93 EUR bis 1.33 EUR
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AOTF4126 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 19A; 21W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 19A Power dissipation: 21W Case: TO220F Gate-source voltage: ±25V On-state resistance: 24mΩ Mounting: THT Kind of channel: enhancement Gate charge: 9nC |
auf Bestellung 986 Stücke: Lieferzeit 14-21 Tag (e) |
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AOTF4126 | Hersteller : Alpha & Omega Semiconductor |
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Produkt ist nicht verfügbar |
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AOTF4126 | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V |
Produkt ist nicht verfügbar |