AOTF4185 AD - Analog Devices
Hersteller: AD - Analog Devices
Transistor P-Channel MOSFET; 40V; 20V; 23mOhm; 34A; 33W; -55°C ~ 175°C; AOTF4185 TAOTF4185
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 2.33 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
7-14 Tag (e)
Mindestmenge:
20 Stücke
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Produktbewertung abgeben
Technische Details AOTF4185 AD - Analog Devices
Description: MOSFET P-CH 40V 34A TO220FL, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220FL, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 20 V.
Weitere Produktangebote AOTF4185 nach Preis ab 1.19 EUR bis 2.53 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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AOTF4185 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 40V 34A TO220FL Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220FL Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 20 V |
auf Bestellung 424 Stücke: Lieferzeit 10-14 Tag (e) |
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AOTF4185 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -27A; 16W; TO220F Type of transistor: P-MOSFET Power dissipation: 16W Case: TO220F Mounting: THT Gate charge: 18.6nC On-state resistance: 16mΩ Polarisation: unipolar Drain current: -27A Kind of channel: enhancement Drain-source voltage: -40V Gate-source voltage: ±20V |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| AOTF4185 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 40V 34A TO220FL
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 20 V
Description: MOSFET P-CH 40V 34A TO220FL
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 20 V
auf Bestellung 424 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.53 EUR |
| 13+ | 1.7 EUR |
| 100+ | 1.19 EUR |
| AOTF4185 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -27A; 16W; TO220F
Type of transistor: P-MOSFET
Power dissipation: 16W
Case: TO220F
Mounting: THT
Gate charge: 18.6nC
On-state resistance: 16mΩ
Polarisation: unipolar
Drain current: -27A
Kind of channel: enhancement
Drain-source voltage: -40V
Gate-source voltage: ±20V
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -27A; 16W; TO220F
Type of transistor: P-MOSFET
Power dissipation: 16W
Case: TO220F
Mounting: THT
Gate charge: 18.6nC
On-state resistance: 16mΩ
Polarisation: unipolar
Drain current: -27A
Kind of channel: enhancement
Drain-source voltage: -40V
Gate-source voltage: ±20V
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)