AOTF600A60L Alpha & Omega Semiconductor
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Technische Details AOTF600A60L Alpha & Omega Semiconductor
Description: MOSFET N-CH 600V 8A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tj), Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V, Power Dissipation (Max): 27.5W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220F, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V.
Weitere Produktangebote AOTF600A60L
| Foto | Bezeichnung | Hersteller | Beschreibung |
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AOTF600A60L | Hersteller : Alpha & Omega Semiconductor |
 Trans MOSFET N-CH 600V 8A 3-Pin(3+Tab) TO-220F Tube |
Produkt ist nicht verfügbar |
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| AOTF600A60L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
AOTF600A60L THT N channel transistors |
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AOTF600A60L | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 8A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tj) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V Power Dissipation (Max): 27.5W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V |
Produkt ist nicht verfügbar |