AOTF66616L Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 38A/72.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 72.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 30 V
auf Bestellung 1501 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 5.93 EUR |
| 50+ | 2.98 EUR |
| 100+ | 2.7 EUR |
| 500+ | 2.2 EUR |
| 1000+ | 2.04 EUR |
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Technische Details AOTF66616L Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 38A/72.5A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 72.5A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, Power Dissipation (Max): 8.3W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: TO-220F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 30 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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AOTF66616L | Hersteller : Alpha & Omega Semiconductor |
60V N-Channel MOSFET |
Produkt ist nicht verfügbar |