AOTF6N90 ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.9A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.9A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 29nC
Kind of channel: enhancement
auf Bestellung 964 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 52+ | 1.39 EUR |
| 59+ | 1.23 EUR |
| 66+ | 1.09 EUR |
| 100+ | 1 EUR |
| 500+ | 0.97 EUR |
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Technische Details AOTF6N90 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 900V 6A TO220-3F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220F, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V.
Weitere Produktangebote AOTF6N90
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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AOTF6N90 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 900V 6A 3-Pin(3+Tab) TO-220F Tube |
Produkt ist nicht verfügbar |
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AOTF6N90 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 900V 6A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V |
Produkt ist nicht verfügbar |