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AOTF7T60P

AOTF7T60P ALPHA&OMEGA


TAOTF7t60p_0001.pdf
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 600V; 30V; 1,1Ohm; 7A; 38W; -55°C ~ 150°C; AOTF7T60P TAOTF7t60p
Anzahl je Verpackung: 10 Stücke
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Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+1.57 EUR
Mindestbestellmenge: 20
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Technische Details AOTF7T60P ALPHA&OMEGA

Description: MOSFET N-CH 600V 7A TO220-3F, Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220F, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 38W (Tc), Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.

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AOTF7T60P Hersteller : Alpha & Omega Semiconductor Inc. AOTF7T60P.pdf Description: MOSFET N-CH 600V 7A TO220-3F
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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