AOTF9N50 ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 23.6nC
Kind of channel: enhancement
| Anzahl | Preis |
|---|---|
| 57+ | 1.27 EUR |
| 81+ | 0.89 EUR |
| 89+ | 0.81 EUR |
| 100+ | 0.79 EUR |
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Technische Details AOTF9N50 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 500V 9A TO220-3F, Part Status: Not For New Designs, Supplier Device Package: TO-220F, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 38.5W (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V.
Weitere Produktangebote AOTF9N50
| Foto | Bezeichnung | Hersteller | Beschreibung |
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AOTF9N50 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 500V 9A TO220-3F Part Status: Not For New Designs Supplier Device Package: TO-220F Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 38.5W (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| AOTF9N50 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 9A TO220-3F
Part Status: Not For New Designs
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 38.5W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: MOSFET N-CH 500V 9A TO220-3F
Part Status: Not For New Designs
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 38.5W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH