AOTL66215 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 120V 305A TOLLA
Input Capacitance (Ciss) (Max) @ Vds: 16800 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: TOLLA
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 10W (Ta), 500W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 305A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
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Technische Details AOTL66215 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 120V 305A TOLLA, Input Capacitance (Ciss) (Max) @ Vds: 16800 pF @ 60 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Drain to Source Voltage (Vdss): 120 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Supplier Device Package: TOLLA, Vgs(th) (Max) @ Id: 3.3V @ 250µA, Power Dissipation (Max): 10W (Ta), 500W (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 305A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote AOTL66215
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| AOTL66215 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 120V; 305A; Idm: 1000A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 305A Pulsed drain current: 1kA Power dissipation: 250W Case: TOLLA Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 185nC Kind of package: reel; tape Kind of channel: enhancement Technology: AlphaSGT™ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AOTL66215 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 120V; 305A; Idm: 1000A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 305A
Pulsed drain current: 1kA
Power dissipation: 250W
Case: TOLLA
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: AlphaSGT™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 120V; 305A; Idm: 1000A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 305A
Pulsed drain current: 1kA
Power dissipation: 250W
Case: TOLLA
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: AlphaSGT™
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH