Weitere Produktangebote AOTL66912Q nach Preis ab 6.19 EUR bis 14.77 EUR
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AOTL66912Q | Hersteller : Alpha & Omega Semiconductor Inc. |
 Description: AOTL66912QPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 370A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Power Dissipation (Max): 10W (Ta), 500W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TOLLA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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AOTL66912Q | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: AOTL66912Q Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 370A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Power Dissipation (Max): 10W (Ta), 500W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TOLLA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 2026 Stücke: Lieferzeit 10-14 Tag (e) |
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| AOTL66912Q | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 370A; 500W; TOLLA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 370A Power dissipation: 500W Case: TOLLA Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 155nC Kind of channel: enhancement |
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