AOV20S60 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 3.6A/18A 4DFN
Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: 4-DFN (8x8)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 278W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
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Technische Details AOV20S60 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 3.6A/18A 4DFN, Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: 4-DFN (8x8), Vgs(th) (Max) @ Id: 4.1V @ 250µA, Power Dissipation (Max): 8.3W (Ta), 278W (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 18A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-PowerTSFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote AOV20S60
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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AOV20S60 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 3.6A/18A 4DFN Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: 4-DFN (8x8) Vgs(th) (Max) @ Id: 4.1V @ 250µA Power Dissipation (Max): 8.3W (Ta), 278W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| AOV20S60 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 3.6A/18A 4DFN
Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: 4-DFN (8x8)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 278W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 3.6A/18A 4DFN
Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: 4-DFN (8x8)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 278W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH